Scanning electron microscope image shows a single silicon nanowire positioned in an etched trench using NIST’s nanowire manipulation technique. The trench helps keep the nanowire in position during the fabrication of the rest of the test structure, which measures metal/nanowire contact resistance. The scale bar is 20 micrometers long. See NIST Press Release. (Research by Q. L. Li, S. M. Koo, C. A. Richter, M. D. Edelstein, J. J. Kopanski, J. S. Suehle, E.  M. Vogel of EEEL and J. E. Bonevich of MSEL)

NIST team grows high quality gallium nitride nanowires and demonstrates their potential for optical and electronic device applications. See NIST Press Release & GCN News Article. (Research by J. B. Schlager, N. A. Sanford, K. A. Bertness, J. M. Barker, A. Roshko, P. T. Blanchard of EEEL and A. V. Davydov, I. Levin of MSEL)