|
Available late Summer 2009 |
Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter
under variable temperatures.
Applications:
- High-temperature InP etching
- Physical milling of most III-V semiconductors
- Reactive etching of III-V semiconductors
- Reactive etching of metals
Example Use:III-V material and Metals etch
|
 |
| |
|
Available late Summer 2009 |
Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch Si, SiO2 and SiN,x on planar substrates up to
200mm in diameter under variable temperatures.
Applications:
- Anisotropic etching of SiO2 and SiNx
- Low Temperature Si anisotropic etching
- CF4 (in Si/SiO2 etching)
- Anisotropic polymer etching
- Photo-resist etching and descum
Example Use: Deep SiO2; Si Nanostructure, Polymer, SiNx and others
|
 |
| |
|
|
A tool for etching deep Si-trench by "Bosch" process on planar substrates up to 150mm in diameter.
- Etching of Silicon at rates from 1 µm/min to 15 µm/min
- Selectivity to SiO2 ≥ 100 to 1
- Selectivity to Photoresist ≥ 40 to 1
- ICP: 2.4 MHz 250w
- RF: 13.56 MHz 300w
- Gases: C4F8, SF6, O2, N2, Ar
Applications: Deep Si etch
Demonsrated Use:
Bosch deep Si etch, MEMS, Nanopositioners, Cantilevers, Thermal conductors
|
 |
| |
|
|
A system based on Argon and Fluorine gases to etch metal and dielectric materials on planar substrates up to 200mm in diameter.
- RF: 13.56 MHz
- Power: 500w
- Gases: Ar, CHF3, CF4, SF6, O2
Applications:
- Physical milling of most metals
- Anisotropic etching of metal films
- Anisotropic etching of SiO2 and SiNx
Demonstrated Use: Au, Ni, Co, TiW, SiO2 and Metal oxide surface clean
|
 |
| |
|
|
A system based on Oxygen and Fluorine gases to etch polymer and dielectric materials on planar substrates up to 200mm in diameter.
- RF: 13.56 MHz
- Power: 500W
- Gases: CHF3, CF4, SF6, N2O, O2
Applications:
- Anisotropic thin film etch
- Etches Silicon Dioxide, Silicon Nitride, Silicon, and Organics
- Descum and Oxygen cleaning
- SiNx Membrane
Demonstrated Use:
SiO2, SiNx and Si thin film and nanostructure etching; Photoresist descum;
Nanoimprint resist residual etching; Organic residual clean
|
 |
| |
|
|
Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar
substrates up to 150mm in diameter.
- ICP: 2.0 MHz 2500W
- RF: 13.56 MHz 300W
- Gases: Cl2, Ar, BCl3, SF6, O2
Applications:
- Anisotropic etching of metal films
- Etches Chromium, Aluminum, and other Chlorine-based etchable metals
- Other materials etchable by SF6, Ar, and O2
Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch
|
 |
| |
|
|
This system uses Xenon difluoride vapor to etch silicon.
Applications:
- Almost infinite selectivity of Silicon to photoresist, silicon dioxide, silicon nitride and Aluminum.
- Utilizes Xenon Difluoride (XeF2) in vapor phase.
Sample Size: Pieces up to 6" wafers.
Restrictions:
- Silicon substrates allowed.
- All other materials must be approved.
- Glass and Silicon Substrates allowed.
Demonstrated use: Release etch for membranes, cantilevers and other suspended devices.
|
 |
| |
|
|
A tool using microwave oxygen plasma to remove organics on the surfaces
- Frequency: 2.45 GHz
- Power: 100W
- No Cr, AG exposed to the surface
Applications:
- Surface cleaning after processes including ion implant, plasma etching, and sputter etching.
- Surface cleaning of semiconductor wafers after wet etch chemical process.
- Surface cleaning after extended storage.
- Removal of organic passivation layers and resist.
Demonstrated Use:
Post dry/wet etching surface clean, Wafer recycle
|
 |
This page is for NIST Staff only!