NIST CNST Nanofab Equipment
Inspection

Certain commercial equipment, and software, are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.

A laser reflection based surface curvature and stress measurement tool.

Film stress determined by the change in wafer curvature between pre-and post-deposition of film. Curvature is measured by reflected laser beam.

• Film coating stress measurement
• Stress as a function of time or temperature
• Stress on multiple films
• Stress mapping
• Silicon wafer deformation after grinding
• Temperature range: -65 to 500°C
• Wafer size: 75 to 200mm
• Speed: 6 seconds/wafer
• Range: 1 to 4000MPa (1E7-4E10 dy/cm2)
• Repeatability: 1MPa

Bridges gap between high power optical scope and standard SEM. Ease of use, depth of focus, auto image adjustment and speed (3 min. set-up time)

• Mag: 20-10,000x
• Accel. voltage: 15kV
• Max sample size: 70mm
• Max sample thick: 20mm
• Traverse: 15x18mm
• Measurement markers

High performance research grade field emission SEM for imaging

• Digital system with full function computer control
• Airlock
• Pieceparts to 150 mm wafers
• Secondary and backscattered electron detectors
• Images structures down to 10 nm in size
• Resolution: 1.5 nm at 15 keV
• Magnification: 10x to 1000kx

Applications:

• Tapping mode atomic force microscopy
• Contact mode atomic force microscopy
• Lateral force atomic force microscopy
• Phase mode atomic force microscopy
• Magnetic force microscopy
• Scanning Tunneling Microscopy

Capabilities:

• Samples up to 150 mm, up to 12 mm thick
• Stepper-motor controlled stage
• Top view optical microscopy of scanning area
• Location: Nanofab Post Process Lab. Bldg. 215, Rm. C0-2