NIST CNST Nanofab Equipment
Lithography

Certain commercial equipment, and software, are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.

• 1x1 to 6x6 inch square masks
• 50 to 200mm wafer diameter
• Structures down to 0.6um
• Address grid down to 25nm
• Top and back-side alignment
• Auto-focus write heads
• Exchangeable write heads
• Accepts DXF, GDS-II, CIF, Gerber, STL formats

• Resolution: < 4 nm
• Linewidth: <10 nm
• Stitching and overlay accuracy: ≤15 nm (mean + 3 sigma)
• 100 keV
• 50 MHz, 20 bits for high throughput and pattern accuracy
• Pieceparts to 150 mm wafers ( with 300 mm capability)
• 7-inch mask capability
• 10-wafer air-lock capacity

• Accelerating voltage: 1 kV to 40 kV.
• Sample Size: 0.5 cm x 1 cm to 1 cm x 2 cm accepted through load lock; Sample sizes up to and including 3-inch wafers can be loaded by drawing out the specimen stage, but this increases the pump down time.
• Field Size: 350 µm x 350 µm at 200x; 80 µm x 80 µm at 1000x.
• Resolution: At 40 kV, 1000x, 10 pA:
  • 100 nm readily achievable in most cases;
  • 50 nm achievable by a skilled operator utilizing a positive resist (PMMA) system along with appropriate choice of design and substrate;
  • 30 nm has been achieved with special processing.
• Software: DesignCAD; Nanometer Pattern Generation System (NPGS), J.C. Nabity

This tool creates a pattern in a thin resist by embossing from a mold. The pattern is later transferred to the wafer by reactive ion etching.

• Pieceparts up to 150 mm wafers
• Nitrogen cushion pressure ensures uniformity
• Imprint temperature from room to 300 °C
• Heating rate >5 °C/s
• Cooling rate >2 °C/s
• Capable of UV-curable as well as thermoplastic resists
• High throughput: capable of <60 s per wafer
• Feature size down to 10 nm

• UV broadband (250 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available. Contact super-user for installing I-line or G-line filters.
• Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
• Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 8"x 8"
• Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
• Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
• Maximum wafer thickness: 3 mm
• The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and Microsystems Technology.

• UV broadband, I-line (365 nm) and G-line (436 nm) wavelength available. Contact super-use for installing I-line or G-line filters.
• Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
• Mask size: 4"x 4", 5"x 5" and 7"x 7"
• Wafer size for Top-Side Alignment: 3", 4", 6" and 8"
• Maximum wafer thickness: 3 mm
• Note: this tool is not capable of doing bottom-side alignment

• One tool for up to 6" wafers
• One tool for up to 8" wafers
• Used mostly for standard photoresists but are also acid-resistant
• Manual dispense

• Manual and automatic dispense
• Equipped with hot plate for curing
• 6000 RPM maximum speed
• 0.5" to 8" wafers
• 300 °C maximum temperature
• Three bake methods: proximity, soft contact and hard contact
• Stores up to10 user programs