NIST CNST Nanofab Equipment
Post Process

Certain commercial equipment, and software, are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.

• Photoresist stripping (Ashing) after plasma metal-etch and after high temperature processes including ion implant, sputter etching and RIE.
• Surface cleaning of semiconductor wafers as often employed after wet etch develop of photoresist prior to wet or plasma etching (descuming).
• Surface cleaning after extended storage.
• Removal of organic passivation layers and resist.
• Etching of Silicon, Silicon Nitride, Polyimide, and other films consistent with isotropic oxygen or fluorine chemistry plasma etching.

• SEM Resolution: 1.1 nm @ 20kV, 2.5 nm @ 1kV
• FIB Resolution: 4.0 nm @ 30kV
• SEM Magnification: 30x – 900 kx
• FIB Magnification: 475x – 500kx
• Gas Injection : 4 Channel
  • Up to two different solid state precursors
  • Up to four different gaseous or liquid precursors
  • Wide range of precursors options including W, Pt, C, and silicon oxide insulator deposition
• Detectors
  • In-column EsB and BSE
  • In-lens: SE detector
  • Chamber: Everhart Thornley type SE detector
• Chamber
  • Two specimen exchange positions
  • 7 additional available ports for upgrade options
• 3D Software for Image Reconstruction

• Full wafer dicing
• Auto cutting and semi-auto cutting modes
• Used to dice silicon, sapphire, ceramic, metals, Pyrex, glass, epoxy substrates.
• Maximum material thickness < 0.50 in

• Wedge bonder
• Semi-automatic and manual modes
• Independent Z-axis control, separate from X and Y axis control
• Force, power and time independently adjustable on each bond
• Auto step back with motorized Y stage for precise wire length and loop formation
• Wire sizes 18-75 microns (0.0007-0.003") diameter, gold and aluminum
• Ribbon sizes up to .001"x.010" (gold)

This tool when used for the CO2 dry release after wet etching provides the most beneficial process for reducing Stiction and increasing yield of suspended and floating structures.