News Archive

Nanofab Users Meeting – Dec. 13, 2007

The next Nanofab Users meeting will take place on Thursday, December 13, 2007 from 1:30 to 2:30pm in room 217/H107. Marc Cangemi will give a presentation on the baseline processes used for tool benchmarking in the Nanofab. In order to ensure the stability and reproducibility of the process tools of the Nanofab, a set of standard ("baseline") processes have been developed for most tools. These processes are run at regular intervals and a relevant parameter is measured to generate statistical process control charts. The methodology used and the baseline data currently available will be presented.

For more information contact J. Alexander Liddle, Nanofab Manager.

New Nanofab Staff Member

William "Bill" Young has joined the Nanofab group as Senior Equipment Maintenance Technician. Bill has over 20 years of experience in the maintenance, operation and acquisition of wafer Fab equipment such as PVD, CVD, furnaces, plasma etchers, gas handling systems and wet decks. He is also an expert in the test and repair of sophisticated digital, RF, electromechanical and vacuum systems down to component level. Most of this experience was acquired while at National Semiconductor Inc., and Covega Corp., where he was also Emergency Response Team coordinator and commander.

CNST Nanofab Post Process Lab Now Available

The construction of the new post process lab located directly below the Nanofab Cleanroom has been completed. The lab space is approximately 600 ft² and provides access to a solvent fume hood, optical inspection microscopes, Wafer Dicing Saw, Wire bonder and an Atomic Force Microscope.

New Nanofab Hire Started April 2007

A new member, Dr. Lei Chen, joined the Nanofab team on April 16, 2007. His main focus is the development of processes and process recipes for our users. His areas of expertise in nanofabrication are lithography, RIE, wet etching, CVD, PVD, SAM, ALD, nano-imprint lithography, self assembly and polymer formulation. Lei received his PhD in polymer science and engineering from Nanjing University in 1997. After a post-doc at Princeton University, Lei joined NanoOpto Corp. in 2001 as senior engineer. His scientific knowledge and practical hands-on process and tool experience will be a great addition to our team to better help our users in their process development.

Microwave Asher is installed.

The CNST Nanofab has purchased a Plasma Processor 300 Semi Automatic Microwave Batch Plasma Processor system from PVA Tepla Inc. This system is capable of processing up to 25 eight inch wafers per batch utilizing a 1000 Watt microwave power supply. The Plasma Processor 300 Semi Automatic is used principally in the semiconductor and electronic industry for dry Ashing removal of organic material, common applications include:

• Photoresist stripping (Ashing) after plasma metal etch and after high temperature processes including ion implant, sputter etching and RIE.
• Surface cleaning of semiconductor wafers as often employed after wet etch develop of photoresist prior to wet or plasma etching (descuming).
• Surface cleaning after extended storage.
• Removal of organic passivation layers and resist.
• Etching of Silicon, Silicon Nitride, Polyimide, and other films consistent with isotropic oxygen or fluorine chemistry plasma etching.

Critical Point Dryer is Now Available!

The new Tousimis Samdri Supercritical Point Dryer is successfully used to increase yield and uniformity of MEMS and NEMS devices. Liquid carbon dioxide is the transitional fluid used to process your delicate membranes, cantilevers and other suspended structures. This tool when used for the CO2 dry release after wet etching providing the most beneficial process for reducing Stiction and increasing yield.

New Kulicke and Soffa Model 4526 Wire Bonder Now Available!

• Wedge bonder
• Semi-automatic and manual modes
• Independent Z-axis control, separate from X and Y axis control
• Force, power and time independently adjustable on each bond
• Auto step back with motorized Y stage for precise wire length and loop formation
• Wire sizes 18-75 microns (0.0007-0.003") diameter, gold and aluminum
• Ribbon sizes up to .001"x.010" (gold)